Hafnium Oxide/Graphene/Hafnium Oxide-Stacked Nanostructures as Resistive Switching Media
نویسندگان
چکیده
Thin HfO2 films were grown by atomic layer deposition on chemical vapor-deposited large-area graphene. The graphene was transferred, prior to the of overlayer, bottom dielectric pregrown Si/TiN substrate. Either HfCl4 or Hf[N(CH3)(C2H5)]4 used as metal precursor for layer. O2 plasma-assisted process applied growing from also top To improve transfer, effects surface pretreatments as-grown and aged Si/TiN/HfO2 substrates studied compared. retained its integrity after plasma processes. Studies resistive switching HfO2-graphene-HfO2 nanostructures revealed that operational voltage ranges in graphene-HfO2 stacks modified together with ratios between high- low-resistance states.
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ژورنال
عنوان ژورنال: ACS applied nano materials
سال: 2021
ISSN: ['2574-0970']
DOI: https://doi.org/10.1021/acsanm.1c00587